过去一年中添加的文章，按日期排序

Orientation-dependent magnetic properties and anomalous Hall effect in half-metallic NiCo2O4 thin films

Z Xu, Z Bai, X Li, Y Wang, Q Liu, S Hu, Y Zhu, Y Jiang… - 2024 - researchsquare.com
1 天前 - … an antiferromagnetic NiO layer, we achieve a significant exchange-bias effect and
enhanced coercive field, holding immense potential for future spintronics applications, such …
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Rational Design of Two-Dimensional High-Temperature Ferromagnet from HCP Cobalt

BJ Wang, YN Hou, CD Jin, H Zhang, J Wang… - Physical Chemistry …, 2024 - pubs.rsc.org
4 天前 - … ferromagnetic metal within the Stoner model but Co2X2 (X = Br and I) are ferromagnetic
… an ideal candidate for spintronic applications since the direction of spin polarization is …
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[PDF] arxiv.org

Magnetic order-dependent giant tunneling magnetoresistance and electroresistance in van der Waals antiferromagnetic-multiferroic tunnel junctions

Z Yan, D Qiao, W Lu, X Dong, X Xu - arXiv preprint arXiv:2408.01618, 2024 - arxiv.org
7 天前 - … layer antiferromagnetic MnBi2Te4 and the ferroelectric polarization direction of
the … memory, expanding the application avenues for antiferromagnetic spintronic devices. …
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Light elements adsorption modulates the electronic structure of h-BC2N / gC6N6 nanoribbons

M Yin, D Fan, X Tan, Z Wang, H Li, H Hu, Z Nie… - Physica …, 2024 - iopscience.iop.org
11 天前 - … ferromagnetic coupling state was found to be the lowest, indicating that the final
stable state was the ferromagnetic … This provides more development directions for spintronics …
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Temperature Dependence of Topological Spin Textures in Ferrimagnetic Mn2-xZnxSb Crystal

Y Li, MRU Nabi, H Park, Y Liu, AK Petford-Long, J Hu… - 2024 - academic.oup.com
17 天前 - … non-colinear motion of the skyrmions in a direction perpendicular to that of the electron
… spintronic devices. However, the skyrmion Hall effect is suppressed in antiferromagnetic …
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Implementation of Logic Function and Memristive Behavior in Synthetic Antiferromagnet with Strong Immunity to Perpendicular Magnetic Field Interference

B Zhang, Y Zhang, K Luo, Y Guo, Z Yan… - physica status solidi … - Wiley Online Library
17 天前 - … The usage of synthetic antiferromagnet (SAF) can effectively address this issue
due to its good magnetic field immunity. This work demonstrates the implementation of all 16 …
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[PDF] arxiv.org

Spin Splitting in Altermagnetic RuO Enables Field-free Spin-Orbit Torque Switching via Dominant Out-of-Plane Spin Polarization

Z Li, Z Zhang, X Lu, Y Xu - arXiv preprint arXiv:2407.07447, 2024 - arxiv.org
30 天前 - … characteristics of both ferromagnetism and antiferromagnetism. … spintronic
applications but also brings us closer to realizing advanced memory and logic devices that are both …
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Strain-explorable valley-polarized topological phase transition and perpendicular magnetocrystalline anisotropy in hexagonal ( = Ru, Os) monolayers

Z Zhang, H Huang, L Wang, Y Zhao, C Liu, S Zhou… - Physical Review B, 2024 - APS
30 天前 - … ) ferromagnetic ma… both H-RuClBr and H-OsClBr is also observed under biaxial
strain, which can expand the novel applications for the interplay among valleytronics, spintronics…
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[PDF] wiley.comFull View

Asymmetric Manipulation of Perpendicular Exchange Bias and Programmable Spin Logical Cells by Spin–Orbit Torque in a Ferromagnet/Antiferromagnet System

L Guo, G Shi, G Wang, H Su, H Zhang… - Advanced …, 2024 - Wiley Online Library
31 天前 - … Antiferromagnets are competitive candidates for the next generation of spintronic
devices … (SOT) in ferromagnetic (FM)/antiferromagnetic (AFM) systems has become focused in …
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[PDF] nii.ac.jp

[PDF][PDF] 軟磁性センダスト合金薄膜の開発とそれを電極としたトンネル磁気抵抗効果に関する研究

赤松昇馬 - tohoku.repo.nii.ac.jp
32 天前 - … In spintronics, particularly important research on MR … a ferromagnetic thin film
changes depending on the relative angle between the direction of magnetization and the direction …
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