Thermal Decomposition of Hafnium Ethoxide-Mollecular Precursor for Hafnia Dielectric Thin Films
EE VALCU, V MUSAT, T LEEDHAM - The Annals of “Dunarea de Jos” …, 2012 - gup.ugal.ro
The HfO 2 thin-film is a very promising gate dielectric material for last generation transistors.
The paper presents the thermal decomposition of hafnium ethoxide used as molecular
precursor for obtaining hafnia thin films. The investigated molecular precursor is a mixture of
Hf 3 O (OC 2 H 5) 10 and Hf 4 O (OC 2 H 5) 14 moisture sensitive amorphous powder.
The paper presents the thermal decomposition of hafnium ethoxide used as molecular
precursor for obtaining hafnia thin films. The investigated molecular precursor is a mixture of
Hf 3 O (OC 2 H 5) 10 and Hf 4 O (OC 2 H 5) 14 moisture sensitive amorphous powder.
THERMAL DECOMPOSITION OF HAFNIUM ETHOXIDEMOLLECULAR PRECURSOR FOR HAFNIA DIELECTRIC THIN FILMS.
V MUSAT, T Leedham - … of the University Dunarea de Jos …, 2012 - search.ebscohost.com
Abstract The HfO< sub> 2</sub> thin-film is a very promising gate dielectric material for last
generation transistors. The paper presents the thermal decomposition of hafnium ethoxide
used as molecular precursor for obtaining hafnia thin films. The investigated molecular
precursor is a mixture of Hf< sub> 3</sub> O (OC< sub> 2</sub> H< sub> 5</sub>) 10 and
Hf< sub> 4</sub> O (OC< sub> 2</sub> H< sub> 5</sub>) 14 moisture sensitive amorphous
powder. The thermal decomposition of hafnium ethoxide precursor was investigated by TG …
generation transistors. The paper presents the thermal decomposition of hafnium ethoxide
used as molecular precursor for obtaining hafnia thin films. The investigated molecular
precursor is a mixture of Hf< sub> 3</sub> O (OC< sub> 2</sub> H< sub> 5</sub>) 10 and
Hf< sub> 4</sub> O (OC< sub> 2</sub> H< sub> 5</sub>) 14 moisture sensitive amorphous
powder. The thermal decomposition of hafnium ethoxide precursor was investigated by TG …
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