Superconductor proximitized one-dimensional semiconductor nanowires with strong spin-
orbit interaction (SOI) are, at this time, the most promising candidates for the realization of
topological quantum information processing. In current experiments the SOI originates
predominantly from extrinsic fields, induced by finite size effects and applied gate voltages.
The dependence of the topological transition in these devices on microscopic details makes
scaling to a large number of devices difficult unless a material with dominant intrinsic bulk …

Superconductor proximitized one-dimensional semiconductor nanowires with strong spin-
orbit interaction (SOI) are at this time the most promising candidates for the realization of
topological quantum information processing. 1-6 In current experiments the SOI originates
predominantly from extrinsic fields, induced by finite size effects and applied gate voltages.
The dependence of the topological transition in these devices on microscopic details makes
scaling to a large number of devices difficult unless a material with dominant intrinsic bulk …