[HTML][HTML] Toward achieving cost-effective hexagonal BN semi-bulk crystals and BN neutron detectors via halide vapor phase epitaxy
Z Alemoush, NK Hossain, A Tingsuwatit… - Applied Physics …, 2023 - pubs.aip.org
Presently, thermal neutron detectors fabricated from boron-10 enriched hexagonal boron
nitride (h-10 BN) ultrawide bandgap semiconductor grown by metal organic chemical vapor
deposition (MOCVD) hold the record high detection efficiency among all solid-state
detectors at 59%. To overcome the short comings of MOCVD growth, including inherently
low growth rate and unavoidable impurities such as carbon in metal organic source, we
demonstrate here the growth of natural hexagonal boron nitride (h-BN) semi-bulk wafers …
nitride (h-10 BN) ultrawide bandgap semiconductor grown by metal organic chemical vapor
deposition (MOCVD) hold the record high detection efficiency among all solid-state
detectors at 59%. To overcome the short comings of MOCVD growth, including inherently
low growth rate and unavoidable impurities such as carbon in metal organic source, we
demonstrate here the growth of natural hexagonal boron nitride (h-BN) semi-bulk wafers …
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