Transparent thin film transistors based on indium oxide semiconductor
G Lavareda, CN de Carvalho, E Fortunato… - Journal of non …, 2006 - Elsevier
Journal of non-crystalline solids, 2006•Elsevier
Indium oxide films were deposited by radio-frequency plasma enhanced reactive thermal
evaporation (rf-PERTE). The combined use of rf power and oxygen pressure allowed the
control of the crystallite size in the film, changing the optical and electrical properties. The
films obtained have electrical resistivity ranging from 13.7 to 1.7× 107Ωcm. Transparent
TFTs made with those films as semiconducting and conducting layers, respectively, present
threshold voltages near 2V and on/off ratios of 104.
evaporation (rf-PERTE). The combined use of rf power and oxygen pressure allowed the
control of the crystallite size in the film, changing the optical and electrical properties. The
films obtained have electrical resistivity ranging from 13.7 to 1.7× 107Ωcm. Transparent
TFTs made with those films as semiconducting and conducting layers, respectively, present
threshold voltages near 2V and on/off ratios of 104.
Indium oxide films were deposited by radio-frequency plasma enhanced reactive thermal evaporation (rf-PERTE). The combined use of rf power and oxygen pressure allowed the control of the crystallite size in the film, changing the optical and electrical properties. The films obtained have electrical resistivity ranging from 13.7 to 1.7×107Ωcm. Transparent TFTs made with those films as semiconducting and conducting layers, respectively, present threshold voltages near 2V and on/off ratios of 104.
Elsevier
以上显示的是最相近的搜索结果。 查看全部搜索结果