Tuning metal-insulator transitions in epitaxial V2O3 thin films
EB Thorsteinsson, S Shayestehaminzadeh… - Applied Physics …, 2018 - pubs.aip.org
We present a study of the synthesis of epitaxial V 2 O 3 films on c-plane Al 2 O 3 substrates
by reactive dc-magnetron sputtering. The results reveal a temperature window, at
substantially lower values than previously reported, wherein epitaxial films can be obtained
when deposited on [0001] oriented surfaces. The films display a metal-insulator transition
with a change in the resistance of up to four orders of magnitude, strongly dependent on the
O 2 partial pressure during deposition. While the electronic properties of the films show …
by reactive dc-magnetron sputtering. The results reveal a temperature window, at
substantially lower values than previously reported, wherein epitaxial films can be obtained
when deposited on [0001] oriented surfaces. The films display a metal-insulator transition
with a change in the resistance of up to four orders of magnitude, strongly dependent on the
O 2 partial pressure during deposition. While the electronic properties of the films show …
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