Electronic and optical properties of boron nitride monolayer have been studied by full
potential augmented plane waves plus local orbital (FP-APW+ lo) in the framework of the
density functional theory. For achieving new applications, biaxial stress and strain effects on
electronic and optical properties have been investigated. The results show that by exerting
stress and strain on BN nanosheet, we can control energy band gap of this nanostructure.
Optical calculations present that applying stress and strain does not have remarkable …

Using first principles calculations, electronic and optical properties of indium nitride
graphene-like structure have been studied under various stress and strain values. The
results exhibit that this compound in the range of±6 applied biaxial strain remains a direct
band gap semiconductor. Also, exerting stress and strain reduces the energy band gap of
the considered materials. The optical calculations illustrate that applying stress and strain on
system results in blue and red shift in optical spectra. All obtained results presented that we …