Ultra low contact resistivities for CMOS beyond 10-nm node
IEEE electron device letters, 2013•ieeexplore.ieee.org
Contact resistances are directly measured for contacts with sizes from 25 to 330 nm using e-
beam based nano-TLM devices. Record low contact resistivities ∼1.5*10^-9~Ω⋅~\rmcm^2
are extracted from Ni (Pt) silicide contacts on in situ boron-doped \rmSi_0.7\rmGe_0.3 with a
chemical boron-doping density of 2*10^21/\rmcm^3. This is very promising for pMOS
applications beyond the 10-nm node. A clear dependence of contact resistance on the
silicide thickness has also been found.
beam based nano-TLM devices. Record low contact resistivities ∼1.5*10^-9~Ω⋅~\rmcm^2
are extracted from Ni (Pt) silicide contacts on in situ boron-doped \rmSi_0.7\rmGe_0.3 with a
chemical boron-doping density of 2*10^21/\rmcm^3. This is very promising for pMOS
applications beyond the 10-nm node. A clear dependence of contact resistance on the
silicide thickness has also been found.
Contact resistances are directly measured for contacts with sizes from 25 to 330 nm using e-beam based nano-TLM devices. Record low contact resistivities are extracted from Ni(Pt) silicide contacts on in situ boron-doped with a chemical boron-doping density of . This is very promising for pMOS applications beyond the 10-nm node. A clear dependence of contact resistance on the silicide thickness has also been found.
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