Ultra-low threshold gallium nitride photonic crystal nanobeam laser
We report exceptionally low thresholds (9.1 μJ/cm 2) for room temperature lasing at∼ 450
nm in optically pumped Gallium Nitride (GaN) nanobeam cavity structures. The nanobeam
cavity geometry provides high theoretical Q (> 100 000) with small modal volume, leading to
a high spontaneous emission factor, β= 0.94. The active layer materials are Indium Gallium
Nitride (InGaN) fragmented quantum wells (fQWs), a critical factor in achieving the low
thresholds, which are an order-of-magnitude lower than obtainable with continuous QW …
nm in optically pumped Gallium Nitride (GaN) nanobeam cavity structures. The nanobeam
cavity geometry provides high theoretical Q (> 100 000) with small modal volume, leading to
a high spontaneous emission factor, β= 0.94. The active layer materials are Indium Gallium
Nitride (InGaN) fragmented quantum wells (fQWs), a critical factor in achieving the low
thresholds, which are an order-of-magnitude lower than obtainable with continuous QW …
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