Ultrafast x-ray measurement of laser heating in semiconductors: Parameters determining the melting threshold
Physical Review B, 2001•APS
The pulse-width dependence of thermal melting and ablation thresholds in germanium and
gallium arsenide is correlated to direct, ultrafast x-ray measurements of laser-heated depths.
The heating dynamics, determined by the interplay of nonlinear optical absorption, delayed
Auger heating, and high-density carrier diffusion, explain the scaling laws of thermal melting
thresholds in different semiconductors.
gallium arsenide is correlated to direct, ultrafast x-ray measurements of laser-heated depths.
The heating dynamics, determined by the interplay of nonlinear optical absorption, delayed
Auger heating, and high-density carrier diffusion, explain the scaling laws of thermal melting
thresholds in different semiconductors.
Abstract
The pulse-width dependence of thermal melting and ablation thresholds in germanium and gallium arsenide is correlated to direct, ultrafast x-ray measurements of laser-heated depths. The heating dynamics, determined by the interplay of nonlinear optical absorption, delayed Auger heating, and high-density carrier diffusion, explain the scaling laws of thermal melting thresholds in different semiconductors.
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