We have studied ultrathin Al2O3 and HfO2 gate di-electrics on Ge grown by ultrahigh
vacuum-reactive atomic-beam deposition and ultraviolet ozone oxidation. Al2O3–Ge gate
stack had a eq 23 A, and three orders of magnitude lower leakage current compared to
SiO2. HfO2–Ge allowed even greater scaling, achieving eq 11 A and six orders of
magnitude lower leakage current compared to SiO2. We have carried out a detailed study of
cleaning conditions for the Ge wafer, dielectric deposition condition, and anneal conditions …

Ultrathin Al2O3 and HfO2 gate dielectrics on surface-nitrided Ge … Ultrathin Al 2 O 3 and
HfO 2 gate dielectrics on surface-nitrided Ge … Ultrathin films …