Zero-bias 40Gbit/s germanium waveguide photodetector on silicon
Optics express, 2012•opg.optica.org
We report on lateral pin germanium photodetectors selectively grown at the end of silicon
waveguides. A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10
µm long Ge photodetectors using three kinds of experimental set-ups. In addition, a
responsivity of 0.8 A/W at 1550 nm was measured. An open eye diagrams at 40Gb/s were
demonstrated under zero-bias at a wavelength of 1.55 µm.
waveguides. A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10
µm long Ge photodetectors using three kinds of experimental set-ups. In addition, a
responsivity of 0.8 A/W at 1550 nm was measured. An open eye diagrams at 40Gb/s were
demonstrated under zero-bias at a wavelength of 1.55 µm.
We report on lateral pin germanium photodetectors selectively grown at the end of silicon waveguides. A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10 µm long Ge photodetectors using three kinds of experimental set-ups. In addition, a responsivity of 0.8 A/W at 1550 nm was measured. An open eye diagrams at 40Gb/s were demonstrated under zero-bias at a wavelength of 1.55 µm.
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