… Then, a conformal coating of amorphous silicon on CuO nanowires was fulfilled via a …
diffused out to alloy with the amorphous silicon shell to produce the hollow Si-Cu alloy nanotubes (…

… the amorphous silicon|redox SAM interface was … amorphous silicon was deposited. The E
1/2 values were −0.261 V for n + Si(100)|aSi, + 0.057 V for ITO|aSi, and +0.204 V for p + Si(100)…

… Thus, to model the a-Si:H/c-Si interface, we have considered a thin defective c-Si layer
with a volume density of states N it (E). The surface defect density D it is then given by …

… Interfaces play a crucial role in Coulombic efficiency and cycling stability hence interfaces
engineering is inevitable to improve performance of silicon. In the present work, ultra-thin TiO …

… In this review, computational studies on the amorphous SiO 2 /Si interface and interface
defects are summarized, including the modeling of the interface, the main interface defects, and …

… We analyze the dependence of the interface defect density D it in amorphous/crystalline
silicon (a-Si:H/c-Si) heterojunctions on the microscopic properties of ultrathin (10 nm) undoped a…

… ) measurements obtained on amorphous, partial crystalline and micro-crystalline Si films are
… grown amorphous Si films have a band gap of ~ 1.7eV, whereas partial crystalline Si films …

… Positive stress, on the other hand, must primarily place charge at midgap or lowerin the
amorphous silicon near enough to the interface that the charge state changes during the light IV …

… carbide [a-SiC:H] or hydrogenated amorphous silicon [a-Si:H] window layer, the use of the
… In this study, interface engineering is carried out at the AZO and p-type a-SiC:H interface to …

… For these reasons, we have built a new structure with only one c-Si/a-SiO2 interface, and
open ends in the other c-Si interface and a-SiO2 interface, as shown in Fig. 1. Such an open-…