… The two bit lines give rise to magnetic fields B1 and B2, respectively, and the requirement
that their sum results in a total field which is oppositely directed for the two magnetic layers of …

… used in cells of the magnetic random access memory [1, 2] of … of synthetic antiferromagnets
in an external magnetic field, … and has a wider applica tion field. The optimal conditions for …

… Here we report a new type of antiferromagnetic memory based on the spin phase change in
… antiferromagnetic memory resistors switched by thermal heating assisted magnetic field 11 …

… Using an electric field instead of an electric current (or a magnetic field) to tailor the … Hence,
memory devices built on AFM materials could be capable of resisting magnetic fields and …

… magnetic field via an attached exchange-coupled FM 26 or by techniques analogous to
heat-assisted magnetic … 31 , and room-temperature antiferromagnetic memory resistor 27 . FeRh …

… disks and magnetic random access memories. Reverse of the magnetization direction of …
memory cell is usually realized by magnetic fields. By the same token, a spurious magnetic field …

… antiferromagnets also results in a lack of stray magnetic field since the demagnetization energy
is near zero. This enables antiferromagnetic memory … -to-device magnetic cross-talk [31]. …

… magnetic fields produced by bit and word current lines. The write selectivity of this scheme
was later improved in the “toggle MRAM” by using synthetic antiferromagnetic … magnetic field …

… magnetic field, leading to the disappearance of the memory effect. Figure 3 shows the
experimental results of Pbà for B kx at various temperatures. The IV phase region indicated by the …

… ), which is a metallic ferrimagnetic amorphous alloy with antiferromagnetically coupled spin
… as an equally short effective magnetic field, namely, an opto-magnetic field. The model could …