Dual-material gate (DMG) field effect transistor
W Long, H Ou, JM Kuo, KK Chin - IEEE Transactions on …, 1999 - ieeexplore.ieee.org
… In addition, we select a material with higher work function as the gate’s material 1, which
is … effects without sacrificing other device behavior as in the case of dual gate or other gate …
is … effects without sacrificing other device behavior as in the case of dual gate or other gate …
Device characteristics of polymer dual-gate field-effect transistors
F Maddalena, M Spijkman, JJ Brondijk, P Fonteijn… - Organic electronics, 2008 - Elsevier
… For a dual-gate OFET with its top channel in accumulation, we demonstrate a drop in the
transconductance when the bottom gate potential becomes negative. This transition regime …
transconductance when the bottom gate potential becomes negative. This transition regime …
2D Dual Gate Field‐Effect Transistor Enabled Versatile Functions
… Beyond the Si technology, 2D-materials-based dual-gate transistors are expected to meet …
dual-gate field-effect transistor (ADGFET) with an In 2 Se 3 top gate and a global bottom gate …
dual-gate field-effect transistor (ADGFET) with an In 2 Se 3 top gate and a global bottom gate …
Novel attributes of a dual material gate nanoscale tunnel field-effect transistor
… the design of double-gate tunneling field effect transistor with silicon-… in the tunnel fieldeffect
transistor with high-k gate dielectrics,” … of nanoscale double gate tunnel field effect transistor: …
transistor with high-k gate dielectrics,” … of nanoscale double gate tunnel field effect transistor: …
Increasing the noise margin in organic circuits using dual gate field-effect transistors
M Spijkman, ECP Smits, PWM Blom… - Applied Physics …, 2008 - pubs.aip.org
… The top gate is advantageously used … gate , where C t and C b are the top and bottom
gate capacitances. We show that by adjusting the top gate biases, the noise margin of dual gate …
gate capacitances. We show that by adjusting the top gate biases, the noise margin of dual gate …
Sensitivity enhancement of amorphous InGaZnO thin film transistor based extended gate field-effect transistors with dual-gate operation
HJ Jang, JG Gu, WJ Cho - Sensors and Actuators B: Chemical, 2013 - Elsevier
… Amorphous indium–gallium zinc oxide (a-IGZO) based TiO 2 extended gate field-effect …
by the dual gate operation mode. The capacitive coupling between the front and bottom gate …
by the dual gate operation mode. The capacitive coupling between the front and bottom gate …
Dual-gate field-effect transistor hydrogen gas sensor with thermal compensation
K Tsukada, M Kariya, T Yamaguchi… - Japanese journal of …, 2010 - iopscience.iop.org
… We developed a dual-gate field-effect transistor (FET) hydrogen gas sensor for … The dual-gate
FET hydrogen sensor was integrated with a Pt-gate FET to detect hydrogen and a Ti-gate …
FET hydrogen sensor was integrated with a Pt-gate FET to detect hydrogen and a Ti-gate …
Determining the Number of Graphene Nanoribbons in Dual-Gate Field-Effect Transistors
… measurement of a dual-gate current map (… gates. Under the assumption that no two GNRs
possess the exact same coupling to both gates, we analyze the resonances in the dual-gate …
possess the exact same coupling to both gates, we analyze the resonances in the dual-gate …
Floating gate carbon nanotube dual-gate field-effect transistor for reconfigurable AND/OR logic gates
X Liu, B Sun, X Li, Z Zhang, W Wang… - ACS Applied …, 2022 - ACS Publications
… Here, we demonstrate a dual-gate floating gate field-effect transistor and take advantage
of the CNT channel. The two gates can modulation the electron state of the CNT channel …
of the CNT channel. The two gates can modulation the electron state of the CNT channel …
Dual-gate field-effect transistors of octathio [8] circulene thin-films with ionic liquid and SiO2 gate dielectrics
T Fujimoto, MM Matsushita, K Awaga - Applied Physics Letters, 2010 - pubs.aip.org
… In addition to the conventional single-gate structure, dual-gate field effect transistors have
been developed. These transistors are advantageous, as independent control of the two gate …
been developed. These transistors are advantageous, as independent control of the two gate …
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