… of self-assembled InAs quantum dots embedded in InP. Journal of … tunneling from InAs
quantum dots to GaAs substrate. Journal … in modulation-doped InAs/GaAs quantum dots. Physical …

… Effect of the longitudinal and transverse stacking period of InAs/GaAs quantum dots on the
… the quantum dots period distribution,and it is inadequate to use the isolated quantum dot …

… Abstract There is a significant diminution in the hydrostatic pressure coefficients(PCs)of
the photoluminescence(PL)for InAs/ GaAs quantum dots(QDs)in comparison with that of bulk …

… 另外,对于EMR 材料的选择多使用窄带系的III-V 族化合物,如InSb 和InAs,因为这些化合物有
较高的电子迁移率.文献[37]用分子束外延生长的方法将n 型的 沉积在GaAs 上,其中 …

… Abstract: Due to the atom-like state densities,quantum-dot(QD)lasers have a number of
unique optical and electronic properties.In this work,InAs/GaAs quantum dot semiconductor …

… spectra of InAs/GaAs quantum dots material with photonic … of InAs/GaAs quantum dots by
laser holography and wet etching method. It was found that the spectra from quantum dots with …

… self’assembled vertical ordering InAs quantum dot superlattice on GaAs substrate. The study
… The size and order of island arrays will greatly affect the location and size of quantum dots …

… The IV characteristics and photoresponse of a Schottky junction based on a graphene-InAs/GaAs
quantum dot hybrid structure are studied. The results show that at the bias voltage of 0 …

… stage of the quantum dot,the strain is very critical for both the shape of the quantum dot
and the optical characteristics;extension of the emission wavelength via quantum dot strain …

… Abstract:Toinvestigate theorigin ofstimulated emission ofa Quantum Dot(QD)laser,laserswith …
the excited state of quantum dots, Keywords:self-organized quantum dots:QD1aser:…