We present an atomistic 3-D simulation of graphene nanoribbon field-effect transistors (GNR-FETs),
based on the self consistent solution of the 3-D Poisson and Schrodinger equations …

… lengths are necessary to contact ribbons at both the source and drain. Therefore, to measure
individual ribbons, a large array of source and drain contacts with nano-scale gaps, with …

… Graphene nanoribbons are also known as nanographite ribbons. GNRs are nano-sized
strips of graphene or 1D graphite layers of the width of the nanometer regime. The nanostrips …

… Then, graphene nanoribbon field effect transistor and its modeling and simulation methods
are investigated. The best method for device simulation is the self-consistent solving of …

… of a nanoribbon MOSFET using a semiclassical ballistic model. We find that semiconducting
ribbons a … Although wide ribbons have small bandgaps, which would increase subthreshold …

… addressed such as the performance limit of graphene nanoribbon field-effect transistors (GNRFETs),
the intrinsic carrier mobility in narrow ribbons, and comparison of GNRs with other …

The graphene nano-ribbon field effect transistor (GNRFET) is an emerging technology that
received much attention in recent years. Recent work on GNRFET circuit simulations has …

… effect [6]. Since the bandgap decreases as the ribbon width increases and our ribbon is
approximately 20 nm wide, the confinement-induced bandgap in our ribbon is expected …

We report a temperature independent subthreshold slope (SS) of ∼47 mV/dec at low
temperature in a triple top gate graphene tunnel field-effect transistor (TFET). The outer gates are …

… on transport in graphene nanoribbon metal-oxide-semiconductor field-effect transistors (MOSFETs) …
These effects decrease as ribbon widths increase and as edges become smoother. …