A long-standing challenge facing the combination of two-dimensional crystals into
heterojunction is the unknown effect of mixing layer of different electronic properties …

In electronic and optoelectronic devices made from van der Waals heterostructures, electric
fields can induce substantial band structure changes which are crucial to device operation …

We have realized encapsulated trilayer MoS2 devices with gated graphene contacts. In the
bulk, we observe an electron mobility as high as 7000 cm2/(V s) at a density of 3× 1012 cm …

We use electron transport to characterize monolayer graphene-multilayer MoS2
heterostructures. Our samples show ambipolar characteristics and conductivity saturation on …

Vertical heterostructures of MoS2/h-BN/graphene have been successfully fabricated in
recent experiments. Using first-principles analysis, we show that the structural and electronic …

Perpendicular electric fields can tune the electronic band structure of atomically thin
semiconductors. In bilayer graphene, which is an intrinsic zero-gap semiconductor, a …

The van der Waals interaction in vertical heterostructures made of two-dimensional (2D)
materials relaxes the requirement of lattice matching, therefore enabling great design …

Atomically thin two-dimensional semiconductors such as MoS2 hold great promise for
electrical, optical and mechanical devices and display novel physical phenomena. However …

First-principles calculations demonstrate that widely tunable direct and indirect band gaps
can both be obtained in hBN/MoS2 vertical heterostructures, under a finite vertical electric …

Lateral and vertical two-dimensional heterostructure devices, in particular graphene–MoS2,
have attracted profound interest as they offer additional functionalities over normal two …