Methods of deposition of hydrogenated amorphous silicon for device applications

WG Van Sark - Handbook of Thin Films, 2002 - Elsevier
Publisher Summary This chapter describes the deposition of hydrogenated amorphous
silicon (a-Si: H) and related materials by employing a low-temperature, low-density plasma …

Optoelectronic properties of hydrogenated amorphous silicon films grown using a modified pulsed plasma discharge

C Mukherjee, C Anandan, T Seth, PN Dixit… - Applied physics …, 1996 - pubs.aip.org
Hydrogenated amorphous silicon (a-Si: H) films were deposited by a modified pulsed
plasma decomposition of silane and disilane in which a nonzero low power level was …

The preparation of insitu doped hydrogenated amorphous silicon by homogeneous chemical vapor deposition

BS Meyerson, BA Scott, DJ Wolford - Journal of Applied Physics, 1983 - pubs.aip.org
Raman scattering, infrared absorption, conductivity measurements, electron microprobe,
and secondary ion mass spectrometry (SIMS) were used to characterize boron and …

Hydrogen plasma enhanced crystallization of hydrogenated amorphous silicon films

K Pangal, JC Sturm, S Wagner… - Journal of Applied …, 1999 - pubs.aip.org
Polycrystalline silicon polysilicon is used extensively in the fabrication of thin film transistors
TFTs. Polysilicon formed by the crystallization of amorphous silicon (a-Si) has far superior …

Plasma deposition of hydrogenated amorphous silicon films

W Luft, S Tsuo - Appl. Phys. Commun.;(United States), 1988 - osti.gov
Plasma-assisted chemical vapor deposition has become the most common technique used
in the deposition of hydrogenated amorphous silicone films and devices for photovoltaic …

[引用][C] Hydrogenated amorphous silicon films deposited by reactive sputtering: The electronic properties, hydrogen bonding and microstructure

M Pinarbasi, N Maley, A Myers, JR Abelson - Thin Solid Films, 1989 - Elsevier
M. PINARBASI, N. MALEY, A. MYERS AND JR ABELSON PROLOGUE Objective: • Kinetics of
Film Growth • Influel~ce or Growth on F Page 1 Thin SolidFilms, 171 (1989) 217 233 217 …

Device‐quality wide‐gap hydrogenated amorphous silicon films deposited by plasma chemical vapor deposition at low substrate temperatures.

Y Hishikawa, S Tsuge, N Nakamura, S Tsuda… - Journal of applied …, 1991 - pubs.aip.org
Hydrogenated amorphous silicon (a‐Si: H) films have been fabricated by a plasma chemical
vapor deposition (plasma‐CVD) method at low substrate temperatures (T s: 80 or 50° C) to …

Principles for controlling the optical and electrical properties of hydrogenated amorphous silicon deposited from a silane plasma

Y Hishikawa, S Tsuda, K Wakisaka… - Journal of applied …, 1993 - pubs.aip.org
The optical, electrical, and structural properties of hydrogenated amorphous silicon (a‐Si: H)
films are systematically investigated as functions of the substrate temperature (T s) and …

Alternative deposition processes for hydrogenated amorphous silicon and related alloys

YS Tsuo, W Luft - Applied Physics Communications;(USA), 1990 - osti.gov
Plasma-assisted chemical vapor deposition (CVD), also known as glow discharge
deposition, has become the most common technique used in the deposition of …

Homogeneous chemical vapor deposition

BA Scott - Semiconductors and Semimetals, 1984 - Elsevier
Publisher Summary This chapter review the homogeneous chemical vapor deposition
(HOMOCVD) method and its use to study the chemistry of amorphous hydrogenated silicon …