The effects of hydrogen absorption and desorption in Pd films are studied through reflectivity
and conductance measurements. The data show that there is an appreciable variation in …

A simple two‐dimensional position‐sensitive detector is proposed and initial tests are
reported. The device, aimed to be high‐energy‐radiation resistant and reliable under …

Studies of the photoelectrical and optical properties were done on hydrogenated amorphous
silicon (a-Si: H) films in order to examine the possibility for construction of an efficient sensor …

This work introduces an application of an “interference spectroscopy technique”(IST) for
determination of absorption coefficient and refractive index spectra of amorphous silicon (a …

Amorphous hydrogenated silicon (a-Si: H) films deposited on glass and crystalline silicon
substrates are analyzed using a multi-sample method combining ellipsometry and …

The fabrication of a bolometer for infrared detection using a boron doped amorphous silicon
(a-Si-B: H) thin film is presented for the first time. This thin film (170 nm) was deposited on a …

The optical absorption of doped and undoped hydrogenated amorphous silicon (a‐Si: H)
films ranging from 5 nm to 10 μm was measured using photothermal deflection …

Recently, hydrogenated amorphous silicon Ilayer (a-Si: H) deposited by glow discharge, has
been attracting attention because it has good photoconductive characteristics, moreover, it is …

Hydrogenated amorphous silicon and related alloys represent a special type of thin film
semiconductor material that has attracted much attention in the last decade. The scientific …

The lateral photoeffect in multilayer systems (MLS) consisting of ten to thirty periods of
alternately sputtered hydrogenated amorphous silicon (a-Si: H) and transition metals (Ti …