The magnetic switching of the exchange biased storage layer in thermally assisted magnetic
random access memory cells has been studied in the nanosecond time domain. Under …

The temperature required to set the exchange bias of a ferro∕ antiferromagnetic (F∕ AF)
storage bilayer as a function of the heating pulse width was studied on magnetic tunnel …

We have measured thermally activated magnetization reversal of the free layers in
submicron magnetic tunnel junctions to be used for magnetoresistive random access …

A thermally assisted writing procedure is proposed in a tunnel junction based magnetic
random access memory cell. The magnetic layers of the tunnel junction are both exchange …

We study the effective reversal times for bit-addressed precessional switching of the
magnetization in magnetic random access memories (MRAMs). In our experiments the …

The dynamic heating of submicron size junctions developed for the thermomagnetic write
scheme was investigated. The dependency of the heating power density with the voltage …

Magnetic tunnel junctions 90 to 300 nm wide and of aspect ratio¿ 2 are studied using high-
speed pulse fields with regard to the soft-layer magnetization reversal under thermal …

It has been demonstrated recently that the magnetization of a nano magnet can be switched
by spin-transfer effect within 200 ps. This result is promising for the application of spin …

Magnetic tunnel junctions with a flux-closed sandwich replacing the single-soft layer have
been proposed for increasing the magnetic stability of the junctions. Such flux-closed soft …

By replacing the traditional single magnetic free layer in magnetic random access memory
(MRAM) with a synthetic antiferromagnetic (SAF) layer composed of two …