The Boltzmann transport equation can be solved to give analytical solutions to the resistivity,
Hall, Seebeck, and Nernst coefficients. These solutions may be solved simultaneously to …

A novel machine has been developed to measure transport coefficients in the temperature
range of 50–350 K of thin films deposited on electrically insulating substrates. The measured …

Undoped ZnO, ZnO: Al (0.5, 1, and 2 wt% Al 2 O 3⁠), and ZnO: Mo (⁠ 2 wt% Mo) films were
deposited by radio-frequency magnetron sputtering. Optimal deposition temperature was …

Given the increasingly important role of electronic and optoelectronic devices, thin film
materials that are transparent and show good electrical properties are in great demand. The …

The optical properties of impurity doped ZnO thin films were analyzed by taking into account
the nonparabolicity in the conduction-band and the optically determined carrier …

Electrical conduction in undoped and indium-doped ZnO films in as-deposited, vacuum-
annealed and oxygen-annealed states has been studied. The as-deposited and oxygen …

Transparent conductive oxides (TCOs) with tailor-made electrical and optical properties are
essential for a variety of applications. The linkage of optical and electrical properties in these …

In this paper, we describe the underlying theory along with experiments concerning the
electrical conductivity of transparent conducting ZnO films with a carrier concentration of …

Highly doped indium-tin oxide films exhibit resistivities ρ as low as 1.2× 10− 4 Ω cm, while
for ZnO films resistivities in the range of 2 to 4× 10− 4 Ω cm are reported. This difference is …

The effects of thermal treatment in oxygen, air, and nitrogen gas atmospheres, at
temperatures ranging from 573 to 1173 K, on the electrical transport properties of thin films …