The localization energies, capture cross sections, and storage times of holes in GaSb
quantum dots (QDs) are measured for three GaSb/GaAs QD ensembles with different QD …

The electronic properties of self-organized GaSb quantum dots (QDs) embedded in GaAs n+
p diodes were investigated by capacitance–voltage and deep level transient spectroscopy …

Self‐organized GaSb quantum dots are embedded in GaP by molecular beam epitaxy and‐
diodes are fabricated. The structure of the sample is investigated using transmission …

We present structural, electrical, and theoretical investigations of self-assembled type-II
GaSb/GaAs quantum dots (QDs) grown by molecular beam epitaxy. Using cross-sectional …

Atom probe tomography and cross-sectional scanning tunneling microscopy show that
GaSb/GaAs quantum dots disintegrate into ring-like clusters of islands upon capping. Band …

The hole confinement of self‐organized GaSb/GaAs quantum dots embedded in n+ p‐
diodes is investigated experimentally by admittance spectroscopy. The highest thermal …

A thermal activation energy of 710 meV for hole emission from In As∕ Ga As quantum dots
(QDs) across an Al 0.9 Ga 0.1 As barrier is determined by using time-resolved capacitance …

In this work, the charge carrier dynamics of self-organized semiconductor quantum dots is
investigated by using time-resolved capacitance spectroscopy (deep level transient …

The present paper investigates the current status of the storage times in self‐organized QDs,
surveying a variety of heterostructures advantageous for strong electron and/or hole …

We report on a memory structure that only makes use of holes as the storage charges based
on type-II GaSb/GaAs quantum dots (QDs) using an AlGaAs barrier. The CV measurements …