The development of very fast switching semiconductors based on silicon carbide (SiC) offers
many opportunities. Switching speed and pulse frequency can be increased significantly …

A novel packaging structure for high-speed switching silicon carbide (SiC) power modules
has been proposed based on antiparalleled phase leg units. A prototype 1200 V-360 A SiC …

Silicon Carbide (SiC) technology will push the limits of existing silicon components in the
three directions: higher blocking voltage, higher operating temperature and higher switching …

With the commercial introduction of wide bandgap power devices such as Silicon Carbide
(SiC) and Gallium Nitride (GaN) in the last few years, the high power and high frequency …

The switching speed of power semiconductors has reached levels where conventional
semiconductors packages limit the achievable performance due to relatively high parasitic …

We present static and dynamic performance of a 3.3 kV SiC half-bridge module built on the
ABB module platform–LinPak. The module exploits a multilevel/stacked substrate concept to …

With the commercialization of wide bandgap power devices such as SiC MOSFETs and JBS
diodes, power electronics converters used in the harsh environments such as hybrid electric …

This paper discusses the investigation of SiC MOSFET switching characteristic in high
inductive environment. The characteristic product of stray-inductance times nominal current …

The switching behavior of fast SiC MOSFETs is characterized by many influences and
interdependencies that have a significant impact the device performance. Circuit designers …

An ultra-low-inductance power module using silicon carbide (SiC) devices has been
developed by using an advanced packaging technology. The switching cell inductance was …