The purpose of this work is to look for a practical structure for application of quantum dots
(QDs) in solar cells. We focus on a stack of strain‐compensated GaSb/GaAs type‐II QDs. We …

Abstract Absorption coefficients of GaSb/GaAs quantum dots (QDs) are calculated by the 8-
band strain-dependent k· p method and Fermi's golden rule. A more realistic but simple …

Abstract Two-dimensional (2D) simulation of GaAsSb/GaAs quantum dot (QD) solar cells is
presented. The effects of As mole fraction in GaAsSb QDs on the performance of the solar …

Improvement in the open circuit voltage of the GaSb/GaAs quantum dot intermediate band
solar cell is achieved by compensating thermionic hole emission of the quantum dots with n …

The authors report an enhanced infrared spectral response of GaAs-based solar cells that
incorporate type II GaSb quantum dots (QDs) formed using interfacial misfit array growth …

GaSb/InGaAs quantum dot–well (QDW) hybrid active regions with type-II band alignment are
explored for increasing the infrared absorption in GaAs solar cells. Analyzed GaAs p–i–n …

Quantum-dot (QD) intermediate-band (IB) materials are regarded as promising candidates
for high-efficiency photovoltaics. The sequential two-step two-photon absorption processes …

In this work, we study type-II GaSb/GaAs quantum-dot intermediate band solar cells (IBSCs)
by means of quantum efficiency (QE) measurements. We are able, for the first time, to …

The main limitations of the conventional solar conversion device is that low energy photons
cannot excite charge carriers to the conduction band, therefore do not contribute to the …

Theoretical model and numerical analysis of charge accumulation within a single GaSb
quantum dots layer embedded in GaAs-based Schottky diode is performed. We hereby give …