We examine the influence of quantum dot (QD) morphology on the optical properties of two-
dimensional (2D) GaSb/GaAs multilayers, with and without three-dimensional …

GaSb quantum dots (QDs) in a GaAs matrix exhibit a type-II band alignment with a strong
hole localization and only weakly Coulomb-bound electrons, making these structures very …

GaSb/GaAs and InSb/GaAs material systems can create type-II quantum nanostructures
which provide interesting electronic and optical properties such as having long carrier life …

In last two decades, semiconductor nanostructures, such as quantum wells, wires and dots,
have been recognised as sources and detectors of radiation in the mid-and far-infrared …

We present a combined experimental and theoretical study of InAs/InGaAs/GaAs quantum
dots capable of single photon emission in the technologically important telecom C-band for …

We present a model for the effect of thermal annealing on a single-layer InAs/GaAs quantum
dot (QD) heterostructure and study the corresponding variation in full photoluminescence …

Transient infrared photoluminescence upconversion is used to study the exciton dynamics in
small-gap HgSe colloidal quantum dots in the 2000–6500 cm–1 (0.25–0.80 eV) range. The …

We report photoluminescence (PL), time-resolved PL, and PL excitation experiments on
InAs/GaAs quantum dots (QDs) of different size as a function of temperature. The results …

Abstract In (Ga) As surface quantum dots (SQDs) are promising candidates for surface-
sensitive detection applications. As such, studies of the carrier dynamics are indispensable …

In this work we report a theoretical study of excitons behavior in self-assembled strain-free
GaAs quantum dot molecules (QDMs) obtained by nanoholes filling. More precisely, we …