Electronic states in type-II GaSb quantum dots (QDs) in GaAs are studied theoretically and
compared with experiments to clarify how the spatial overlap of holes in the dot and …

“Giant” or core/thick‐shell quantum dots (gQDs) are an important class of solid‐state
quantum emitter characterized by strongly suppressed blinking and photobleaching under …

Investigating the separate dynamics of electrons and holes has been challenging, although
it is critical for the fundamental understanding of semiconducting nanomaterials. n-Type self …

Epitaxially grown quantum dots (QDs) are established as quantum emitters for quantum
information technology, but their operation under ambient conditions remains a challenge …

We present structural, electrical, and theoretical investigations of self-assembled type-II
GaSb/GaAs quantum dots (QDs) grown by molecular beam epitaxy. Using cross-sectional …

Advancements in photonic quantum information systems (QIS) have driven the development
of high-brightness, on-demand, and indistinguishable semiconductor epitaxial quantum dots …

The optical properties of InAs/GaAs quantum dots capped with a GaAsSb quantum well are
investigated by means of power-dependent and time-resolved photoluminescence. The …

The Sb-induced changes in the optical properties of GaAsSb-capped InAs/GaAs quantum
dots (QDs) are shown to be strongly correlated with structural changes. The observed …

We report low-temperature photoluminescence measurements on highly-uniform GaAs/Al x
Ga 1− x As quantum dots grown by droplet epitaxy. Recombination between confined …

Disentangling carrier kinetics is of both fundamental and technological importance for
optoelectronics, while the hole-state dynamics in Cd chalcogenide quantum dots (QDs) …