Optical studies of single self-assembled semiconductor quantum dots (QDs) have been a
topic of intensive investigation over the past two decades. Due to their solid-state nature …

Resistance to temperature and ionizing radiation of space optoelectronic devices can be
improved through control of carrier kinetics in nanoscale systems. Recent results in the …

Self-assembled semiconductor quantum dots (QDs) exhibit fully quantized electronic states
and high radiative efficiencies. This makes them highly suitable both for fundamental …

We present an experimental study on the optical quality of InAs/InP quantum dots (QDs).
Investigated structures have application relevance due to emission in the 3rd …

The localization energies, capture cross sections, and storage times of holes in GaSb
quantum dots (QDs) are measured for three GaSb/GaAs QD ensembles with different QD …

The photocarrier dynamics in molecular beam epitaxy (MBE)-grown single-(SLQD) and multi-
layered (MLQD) InAs/GaAs quantum dots were studied. Photoluminescence (PL) …

Semiconductor quantum dots are of interest as optical gain media for lasing applications.
Here we report on efficient, broad bandwidth optical gain in the CdSe/ZnS/CdSe quantum …

In this paper we review the subject of dephasing processes and population dynamics in self-
assembled InGaAs/GaAs quantum dot materials and devices. Our aim is to give a …

Many-particle effects are investigated in the photoluminescence of type II GaSb/GaAs
quantum dots (QDs). With increasing excitation density, ie, exciton occupation, the …

We describe the optical emission and the carrier dynamics of an ensemble of self-
assembled GaAs quantum dots embedded in GaP (001). The QD formation is driven by the …