We have studied the material and photovoltaic characteristics of InAs/GaAsSb sub-
monolayer quantum dot solar cells (QDSCs) with different Sb contents of 0%, 5%, 15%, and …

One of the primary challenges facing quantum dot (QD)-based intermediate band solar cells
is the short lifetime of charge carriers (~ 1 ns). To investigate this, InAs QD/GaAs 1-x Sb x …

We have studied the material properties and device performance of InAs/GaAs quantum dot
solar cells (QDSCs) made using three different QD growth modes: Stranski-Krastanov (SK) …

Optical and structural properties of submonolayer InGaAs/GaAs quantum dot solar cells
(SML-QDSCs) are investigated and compared with quantum well solar cells (QWSCs) …

To improve the efficiency of InAs quantum dot solar cells (QDSCs), we propose a QDSC
structure with sub-monolayer (SML) QDs. The optical and electrical properties of Stranski …

We demonstrate improved performance of quantum dot solar cells (QDSCs) by type-II
InAs/GaAsSb structure. With a moderate Sb composition of 18% and high quality QDs, a …

This work reports on the benefits from using thin GaAsSb capping layers (CLs) on InAs/GaAs
quantum dot (QD) solar cells. The application of such CLs allows the tunability of the QD …

The effects of quantum dot (QD) size on the optical and electrical properties of InAs/GaAs
QD solar cells (QDSCs) were investigated. QDSCs with varying InAs QD size were …

The hybrid structure of GaAs/GaAsSb quantum well (QW)/InAs quantum dots solar cells
(QDSCs) is analyzed using power-dependent and temperature-dependent …

We studied the growth of InAs/InGaP quantum dot (QD) solar cells with near ideal bandgaps
for intermediate band solar cells. Using a solid-source molecular beam epitaxy system, the …