In this work, we use photoluminescence (PL) spectroscopy to investigate how self-
assembled GaSb/GaAs quantum dots (QDs) depend on their growth mechanism. Carrier …

We report the investigation of exciton dynamics in type-II self-assembled GaSb/GaAs
quantum dots. The GaSb/GaAs quantum dots (QDs) were grown using a modified liquid …

The effects of GaAs anti-phase domains (APDs) on the growth of GaSb quantum dots (QDs)
are investigated by molecular beam epitaxial growth of GaAs on Ge (001) substrate. Ge is a …

We investigate structural Raman and photoluminescence properties of type II GaSb/GaAs
quantum dots (QDs) grown on (001) Ge substrate by molecular beam epitaxy. Array of self …

Tuning growth of nanostructures can provide additional routes to engineer their
characteristics. In this work, the authors report on a combined growth of GaSb/GaAs …

We report an optical spectroscopic study of GaSb/GaAs quantum dots (QDs) formed by the
Stranski–Krastanow growth mode using molecular beam epitaxy. We identify the QD …

We report structural and optical properties of GaSb/GaAs self-assembled quantum dots
(QDs) grown by molecular beam epitaxy. The QDs, with nanometer-scale dimensions, were …

Electronic states in type-II GaSb quantum dots (QDs) in GaAs are studied theoretically and
compared with experiments to clarify how the spatial overlap of holes in the dot and …

We studied the effects of post‐growth annealing on the optical properties of GaSb quantum
dots (QDs). We grew GaSb QDs in GaAs by droplet epitaxy and carried out a post‐growth …

We report the realization of quantum-sized GaSb dots, of small diameter (/spl sim/25 nm), on
GaAs by molecular beam epitaxy in the Stranski-Krastanow growth mode. With the …