A detailed study of the thickness dependence of optical constants of glow discharge
prepared hydrogenated amorphous silicon thin films (a-Si: H) is reported in this paper. The …

Hydrogenated amorphous silicon (a-Si: H) films were prepared by the process of mercury-
sensitized photochemical vapour deposition. Substrate temperature, hydrogen dilution and …

The addition of hydrogen during the evaporation of silicon has been shown to improve the
electrical properties of the resulting a-Si film considerably by saturation of dangling bonds, if …

This paper reviews recent R&D activities on hydrogenated amorphous silicon (a-Si) thin-film
transistors (TFTs). One of the most important applications of this device is active matrix liquid …

Hydrogenated amorphous silicon films with optical band gaps narrower than 1.7 eV have
been prepared by a chemical annealing process involving the sequential deposition of 10 …

Amorphous silicon films have been prepared by ultra-clean evaporation and sputter
technique enclosing different amounts of hydrogen into the films. The dark conductivity of …

Hydrogenated a-Si, whose properties can be modified by impurity doping, can be produced
either by decomposition of silane or by reactive sputtering of Si in an argon-hydrogen …

We report the effects of the thermal annealing and dopant concentration on the optical
properties of Se or S-doped hydrogenated amorphous silicon thin films. The Se and S …

M. PINARBASI, N. MALEY, A. MYERS AND JR ABELSON PROLOGUE Objective: • Kinetics of
Film Growth • Influel~ce or Growth on F Page 1 Thin SolidFilms, 171 (1989) 217 233 217 …

The variations of the physicochemical and electronic properties of sputtered hydrogenated
amorphous silicon films deposited at substrate temperatures T s between room temperature …