The preparation of hydrogenated amorphous silicon by the radio-frequency (RF) glow
discharge technique is shown to be strongly dependent on the plasma excitation frequency …

Since the publication of the article by Pankove & Carlson (1) in Volume 10 of this series, on
electrical and optical properties of hydrogenated amorphous silicon (a-Si: H), great progress …

The electronic transport properties and the microstructure of a series of hydrogenated
polymorphous silicon (pm-Si: H) samples prepared under different conditions have been …

Annealing and outgassing of thin films of hydrogenated amorphous silicon (a-Si: H) are
shown to produce major structural changes in the material. Outgassing can occur in three …

Highly photosensitive low band gap (≥ 1.5 eV) hydrogenated amorphous silicon (a‐Si: H)
films have been developed by plasma enhanced chemical vapor deposition using helium …

This paper reports on the properties of doped and undoped amorphous silicon films
deposited by the homogeneous chemical vapor deposition (HOMOCVD) technique. It is …

We have deposited undoped a-Si: H films with hydrogen content from 0% to 19% with the
substrate temperature near room temperature (Ts= 40° C). We find an “intrinsic” defect …

Different bandgap engineering approaches are discussed with respect to their application in
thin‐film solar cells based on hydrogenated amorphous silicon (a‐Si: H) and its alloys with …