We present novel data on optoelectronic properties observed in the amorphous-to-
polycrystalline silicon (polysilicon) phase transition, and the effect on as-crystallized films of …

In this paper we have analyzed the influence of the mask channel length (LM) on the
performance of the 55‐nm‐hydrogenated amorphous silicon (a‐Si: H) thin‐film transistors …

The effects of the boron incorporation on the physico‐chemical, optical and electric
properties of hydrogenated amorphous silicon (a‐Si: H) films are presented. Boron‐doped …

Aluminium has been introduced into hydrogenated amorphous silicon-carbon alloy films
prepared by reactive magnetron sputtering, using composite targets of silicon and …

The investigation of heterojunctions between amorphous and crystalline semiconductors
dates back to the early days of research in the field of amorphous semiconductors. In fact …

Conductivity and EPR experiments are reported for boron-and phosphorus-doped chemical-
vapour-deposited amorphous silicon film. In as-deposited films a large increase in the …

A series of experimental studies has been made on the effect of the dilution of silane with
hydrogen on optical properties of hydrogenated amorphous silicon films (a-Si: H) prepared …

Amorphous silicon films have been prepared by plasma decomposition of silane under
magnetic field. The films produced at a high power and a relatively high magnetic field …

Plasma-assisted chemical vapor deposition (CVD), also known as glow discharge
deposition, has become the most common technique used in the deposition of …

Amorphous semiconductors have a long history of successful technological exploitation (1).
However, the large defect density characteristic of amorphous silicon (a-Si), the prototypical …