Photoemission studies involving the valence and core levels of doped and undoped
amorphous hydrogenated silicon (a-Si: H) prepared by the glow-discharge method are …

Image sensors have been made with PIN layers of amorphous hydrogenated silicon on
glass covered with transparent conductor constituted by 16 sensor cells of individual access …

Hydrogenated amorphous silicon and related alloy films have attracted much attention
because of the wide application of these films in devices such as thin-film transistors and …

The amorphous and microcrystalline silicon films have been prepared by hydrogen dilution
from pure silane to silane concentrations≥ 1.25%. At silane concentrations of less than …

A variety of undoped (nonintrinsic) hydrogenated amorphous silicon (a-Si: H) thin films was
studied in greater detail using steady-state photoconductivity, σ ph, subband-gap …

Thin films of amorphous silicon were prepared by rf sputtering under constant hydrogen
partial pressure and various argon partial pressures. The dark conductivity and …

Amorphous hydrogenated silicon (a‐Si: H) films have been prepared by a reactive ion beam
sputtering technique under different conditions of substrate temperature (300–623 K) and …

Hydrogenated amorphous silicon (a-Si: H) films were prepared by a layer-by-layer (LBL)
argon treatment technique. Thin amorphous silicon layers are first deposited and then …

Hydrogenated amorphous silicon oxide (a-SiO: H) films prepared by rf plasma enhanced
chemical vapour deposition (PECVD) method have recently proved their potential as a …