Hydrogenated amorphous silicon (a-Si: H) thin film transistors with channel lengths of 30 μm
and with channel widths of 500 μm were made using dc magnetron sputtering. By optimizing …

Structural and optical properties of two series of hydrogenated silicon films prepared by
reactive radiofrequency magnetron sputtering technique at low substrate temperature, and …

The optical and electrical properties of hydrogenated amorphous silicon (a-Si: H) thin films,
prepared by plasma deposition, were studied as a function of rf power in the range from 12.5 …

The sputtering characteristics for film deposition of hydrogenated amorphous silicon (a‐Si:
H) by dc planar magnetron reactive sputtering have been investigated for a range of H2/Ar …

The metastability of the electronic properties of hydrogenated amorphous silicon (a‐Si: H)
films deposited at high rates by the rf glow discharge decomposition of mixtures containing …

Electrical, photoelectric, and optical properties of hydrogenated amorphous silicon films with
various ratios between the nanocrystalline and amorphous phases in the structure of the …

Amorphous silicon-based materials have attracted considerable attention over the past few
years mainly due to their potential as inexpensive photovoltaic devices. There has been a …

Amorphous hydrogenated silicon films different in thickness (600–2400 nm) were deposited
by plasma enhanced chemical vapour deposition on Corning glass substrates at 250° C …

Thin film solar cells represent the major option for photovoltaic electricity production at
economically acceptable costs. Especially cells and modules based on amorphous silicon …

The properties of amorphous hydrogenated silicon are reviewed, with special emphasis
placed on results obtained by the method of reactive sputtering in an argon-hydrogen …