We propose an innovative description to provide a quantitative basis to enhance the
conversion efficiency of InAs/GaAs quantum dot solar cells (QDSC). A theoretical approach …

In this work, the influence of quantum dot (QD) position on the performance of solar cells
was studied. The presence of QDs within the base regions leads to improved open circuit …

We investigated the effects of doping on the photovoltaic efficiency in a GaAs reference cell,
and in undoped, n-doped, and p-doped InAs/GaAs quantum-dot (QD) solar cells. We found …

We report the fabrication of InAs/GaAs quantum dot solar cells (QDSCs) with enhanced
photocurrent and no degradation in open circuit voltage (V OC) compared to a solar cell …

The main goal of this paper is to determine the accurate values of two parameters namely
the surface generation—recombination rate and the average total number of electrons …

We have studied the material properties and device performance of InAs/GaAs quantum dot
solar cells (QDSCs) made using three different QD growth modes: Stranski-Krastanov (SK) …

We investigated the effect of cubic and spherical quantum dot size and size dispersion (size
non-uniformity) on the absorption coefficient of a quantum dot ensemble. The absorption …

The characteristics of quantum dot solar cells (QDSCs) based on type II QDs are
investigated theoretically. Based on a drift-diffusion model, we obtained a much higher open …

The effects of quantum dot (QD) size on the optical and electrical properties of InAs/GaAs
QD solar cells (QDSCs) were investigated. QDSCs with varying InAs QD size were …

The effect of post‐growth annealing on InAs/GaAs quantum dot solar cells (QDSCs) is
studied. A significant improvement in photoemission, photocurrent density and spectral …