The competitive growth process of ballistic deposition is studied experimentally using x-ray
reflectivity characterization of silicon thin films deposited with various vapor incidence …

X-ray fluorescence and diffraction has been performed on porous silicon samples at
incidences near the critical angle for total external reflection. By fitting the X-ray fluorescence …

Thin (300 nm) porous silicon layers have been formed on p-doped silicon substrate to be
characterized by x-ray reflectivity. The objective was to determine the layer thickness, the …

X-ray reflectivity is used to study the mesoscopic structure of porous silicon layers. For a
porous silicon thin film, we present measurements of the specular and the diffuse scattering …

Two-dimensional hexagonal silica thin films templated by a triblock copolymer were
investigated by grazing incident small angle x-ray scattering (GISAXS) and x-ray reflectivity …

It is well-established that X-ray reflectivity (XR) is an invaluable tool to investigate the
structure of thin films. Indeed, this technique provides under correct analysis, the electron …

A new methodology based on a novel combination of a high-resolution specular x-ray
reflectivity and small-angle neutron scattering has been developed to evaluate the structural …

The structure of porous silicon is investigated by grazing incidence x-ray scattering. Using
GISAXS (grazing incidence small-angle x-ray scattering), a systematic pore correlation is …

A small‐angle x‐ray scattering study of porous layers prepared on lightly doped and heavily
doped silicon wafers reveals strong differences according to the dopant type. The p‐type …

X-ray reflectivity (XRR) was used to investigate the p−-and p+-type porous silicon (PS)
layers. For p−-type samples, a linear dependence of the thickness versus the anodization …