[HTML][HTML] Highly uniform GaSb quantum dots with indirect–direct bandgap crossover at telecom range
A Chellu, J Hilska, JP Penttinen, T Hakkarainen - APL Materials, 2021 - pubs.aip.org
We demonstrate a new quantum-confined semiconductor material based on GaSb quantum
dots (QDs) embedded in a single-crystalline AlGaSb matrix by filling droplet-etched …
dots (QDs) embedded in a single-crystalline AlGaSb matrix by filling droplet-etched …
Unveiling the electronic structure of GaSb/AlGaSb quantum dots emitting in the third telecom window
Epitaxially-grown semiconductor quantum dots (QDs) provide an attractive platform for the
development of deterministic sources of high-quality quantum states of light. Such non …
development of deterministic sources of high-quality quantum states of light. Such non …
Long-wavelength luminescence from GaSb quantum dots grown on GaAs substrates
Self-assembled GaSb quantum dots (QDs) with a photoluminescence wavelength longer
than 1.3 μm were successfully grown by suppressing the replacement of As and Sb on the …
than 1.3 μm were successfully grown by suppressing the replacement of As and Sb on the …
Optical spectroscopy of self-assembled type II GaSb/GaAs quantum dot structures grown by molecular beam epitaxy
We report an optical spectroscopic study of GaSb/GaAs quantum dots (QDs) formed by the
Stranski–Krastanow growth mode using molecular beam epitaxy. We identify the QD …
Stranski–Krastanow growth mode using molecular beam epitaxy. We identify the QD …
Structural and optical properties of type II GaSb/GaAs self-assembled quantum dots grown by molecular beam epitaxy
We report structural and optical properties of GaSb/GaAs self-assembled quantum dots
(QDs) grown by molecular beam epitaxy. The QDs, with nanometer-scale dimensions, were …
(QDs) grown by molecular beam epitaxy. The QDs, with nanometer-scale dimensions, were …
GaSb/GaAs type-II quantum dots grown by droplet epitaxy
We demonstrate the formation of GaSb quantum dots (QDs) on a GaAs (001) substrate by
droplet epitaxy using molecular beam epitaxy. The high crystal quality and bimodal size …
droplet epitaxy using molecular beam epitaxy. The high crystal quality and bimodal size …
Strain‐Free GaSb Quantum Dots as Single‐Photon Sources in the Telecom S‐Band
Generating single photons in the telecommunication wavelength range from semiconductor
quantum dots (QDs) and interfacing them with spins of electrons or holes is of high interest …
quantum dots (QDs) and interfacing them with spins of electrons or holes is of high interest …
An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots
F Qiu, W Qiu, Y Li, X Wang, Y Zhang, X Zhou… - …, 2015 - iopscience.iop.org
We report the investigation of exciton dynamics in type-II self-assembled GaSb/GaAs
quantum dots. The GaSb/GaAs quantum dots (QDs) were grown using a modified liquid …
quantum dots. The GaSb/GaAs quantum dots (QDs) were grown using a modified liquid …
GaSb and InSb quantum nanostructures: morphologies and optical properties
T Poempool, S Kiravittaya, S Sopitpan, S Thainoi… - MRS …, 2016 - cambridge.org
GaSb/GaAs and InSb/GaAs material systems can create type-II quantum nanostructures
which provide interesting electronic and optical properties such as having long carrier life …
which provide interesting electronic and optical properties such as having long carrier life …
Room temperature 1.3 μm emission from self-assembled GaSb/GaAs quantum dots
We describe the growth of GaSb/GaAs self-assembled quantum dots by MBE and also their
incorporation into modulation-doped quantum well devices. The importance of the use of a …
incorporation into modulation-doped quantum well devices. The importance of the use of a …