GaN microdisk light emitting diodes
Microdisk light-emitting diodes (μ-LEDs) with diameter of about 12 μm have been fabricated
from InGaN/GaN quantum wells. Photolithographic patterning and inductively coupled …
from InGaN/GaN quantum wells. Photolithographic patterning and inductively coupled …
InGaN/GaN quantum well interconnected microdisk light emitting diodes
Interconnected microdisk light-emitting diodes (μ-LEDs) have been fabricated from
InGaN/GaN single quantum wells grown by low pressure metal organic chemical vapor …
InGaN/GaN single quantum wells grown by low pressure metal organic chemical vapor …
Size dependence of III-nitride microdisk light-emitting diode characteristics
Individual microdisk blue-light-emitting diodes (μ-LEDs) of varying diameters from 5 to 20
μm have been fabricated from InGaN/GaN quantum wells. Size effects on the μ-LED …
μm have been fabricated from InGaN/GaN quantum wells. Size effects on the μ-LED …
GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses
GaN micro-light-emitting diodes (micro-LEDs) with monolithically integrated microlenses
have been demonstrated. Microlenses, with a focal length of 44 μm and a root mean square …
have been demonstrated. Microlenses, with a focal length of 44 μm and a root mean square …
High extraction efficiency InGaN micro-ring light-emitting diodes
Light-emitting diodes (LEDs) based on an interconnected array of GaN/InGaN micro-ring
elements have been demonstrated. The devices have electrical characteristics similar to …
elements have been demonstrated. The devices have electrical characteristics similar to …
Free-standing, optically pumped, GaN∕ InGaN microdisk lasers fabricated by photoelectrochemical etching
GaN-based, mushroom-shaped microdisk lasers were fabricated using band-gap selective
photoelectrochemical etching. The optically pumped microdisks had well-defined, distinct …
photoelectrochemical etching. The optically pumped microdisks had well-defined, distinct …
Ultrasmall and ultradense InGaN-based RGB monochromatic micro-light-emitting diode arrays by pixilation of conductive p-GaN
We describe 5 μm squircle InGaN-based red, green, and blue (RGB) monochromatic micro-
light-emitting diodes (μLEDs) with an interpitch of 4 μm by pixilation of conductive p-GaN …
light-emitting diodes (μLEDs) with an interpitch of 4 μm by pixilation of conductive p-GaN …
Red InGaN micro-light-emitting diodes (> 620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact
We present efficient red InGaN 60× 60 μm 2 micro-light-emitting diodes (μLEDs) with an
epitaxial tunnel junction (TJ) contact. The TJ was grown by metal-organic chemical vapor …
epitaxial tunnel junction (TJ) contact. The TJ was grown by metal-organic chemical vapor …
III-nitride blue microdisplays
Prototype blue microdisplays have been fabricated from InGaN/GaN quantum wells. The
device has a dimension of 0.5× 0.5 mm 2 and consists of 10× 10 pixels 12 μm in diameter …
device has a dimension of 0.5× 0.5 mm 2 and consists of 10× 10 pixels 12 μm in diameter …
Fabrication and performance of parallel-addressed InGaN micro-LED arrays
High-performance, two-dimensional arrays of parallel-addressed InGaN blue micro-light-
emitting diodes (LEDs) with individual element diameters of 8, 12, and 20 μm, respectively …
emitting diodes (LEDs) with individual element diameters of 8, 12, and 20 μm, respectively …