Observation of negative photoresponse in joule-heated Au/Cu2SnS3 ternary chalcogenide thin film deposited by low energy pulsed laser deposition
Gold (Au) nanoparticles trapped within Cu 2 SnS 3 (CTS) thin films were effectively
deposited on a low-cost glass substrate using a simple pulsed laser deposition of 15 mJ for …
deposited on a low-cost glass substrate using a simple pulsed laser deposition of 15 mJ for …
Fabrication of Cu2SnS3 thin film solar cells using pulsed laser deposition technique
SA Vanalakar, GL Agawane, AS Kamble… - Solar Energy Materials …, 2015 - Elsevier
Abstract Ternary chalcogenide semiconductor Cu 2 SnS 3 (CTS) is an emerging material,
attracting increasing interest for the applications in thin film solar cells. Here we report a …
attracting increasing interest for the applications in thin film solar cells. Here we report a …
Noticeable photo-sensing properties of SnS: Cu thin films fabricated by thermal evaporation technique
Due to their optoelectronic behavior, superior optical absorption, and tunable band-gap
energies, metal chalcogenides have attracted global attention in recent decades. SnS (tin …
energies, metal chalcogenides have attracted global attention in recent decades. SnS (tin …
Photodiode performance and infrared light sensing capabilities of quaternary Cu2ZnSnS4 chalcogenide
In this study, quaternary Cu 2 ZnSnS 4 chalcogenide nanocrystal compound prepared by
hydrothermal method was coated on Si with the help of spin coating technique to be used as …
hydrothermal method was coated on Si with the help of spin coating technique to be used as …
Optical and photoelectrochemical properties of Cu2SrSnS4 thin film fabricated by a facial ball-milling method
Z Tong, J Yuan, J Chen, A Wu, W Huang, C Han, Q Cai… - Materials Letters, 2019 - Elsevier
Earth-abundant and non-toxicity quaternary chalcogenide Cu 2 SrSnS 4 is prepared by a
facial ball-milling method. Its formation is revealed to be from the reaction between Cu 2 SnS …
facial ball-milling method. Its formation is revealed to be from the reaction between Cu 2 SnS …
Temperature dependent growth of Cu2SnS3 thin films using ultrasonic spray pyrolysis for solar cell absorber layer and photocatalytic application
Abstract Ternary chalcogenide Cu 2 SnS 3 (CTS) thin films are deposited on glass
substrates using low cost ultrasonic spray pyrolysis (USP) technique by varying substrate …
substrates using low cost ultrasonic spray pyrolysis (USP) technique by varying substrate …
Nanocrystalline copper sulfide and copper selenide thin films with p-type metallic behavior
Copper chalcogenide materials are interesting for multiple applications due to the feasibility
of suiting their optical absorption and electrical conduction by the creation of copper …
of suiting their optical absorption and electrical conduction by the creation of copper …
Electrical transport properties of dip-coated nanocrystalline Cu2ZnSnS4 thin films
PR Ghediya, TK Chaudhuri, J Ray - Journal of Materials Science: Materials …, 2020 - Springer
Direct deposition of thin films from pure solution has emerged as a promising route for low-
cost chalcogenide absorber materials for solar PV. Electrical transport properties of Cu …
cost chalcogenide absorber materials for solar PV. Electrical transport properties of Cu …
Fabrication of high quality Cu2SnS3 thin film solar cell with 1.12% power conversion efficiency obtain by low cost environment friendly sol-gel technique
JJ Chaudhari, US Joshi - Materials Research Express, 2018 - iopscience.iop.org
Abstract Cu 2 SnS 3 (CTS) is an emerging ternery chalcogenide material with great potential
application in thin film solar cells. We present here high quality Cu 2 SnS 3 thin films using a …
application in thin film solar cells. We present here high quality Cu 2 SnS 3 thin films using a …
The structural, electrical, and photoelectrical properties of Al/Cu2CdSnS4 chalcogenide film/p-Si Schottky-type photodiode
Abstract The Cu2CdSnS4 (CCTS) film has been prepared using the hydrothermal approach
and deposited on the p-type silicon wafer by the use of the sol–gel technique. Then, the …
and deposited on the p-type silicon wafer by the use of the sol–gel technique. Then, the …