The hybrid structure of GaAs/GaAsSb quantum well (QW)/InAs quantum dots solar cells
(QDSCs) is analyzed using power-dependent and temperature-dependent …

One of the primary challenges facing quantum dot (QD)-based intermediate band solar cells
is the short lifetime of charge carriers (~ 1 ns). To investigate this, InAs QD/GaAs 1-x Sb x …

This work reports on the benefits from using thin GaAsSb capping layers (CLs) on InAs/GaAs
quantum dot (QD) solar cells. The application of such CLs allows the tunability of the QD …

We have studied the material and photovoltaic characteristics of InAs/GaAsSb sub-
monolayer quantum dot solar cells (QDSCs) with different Sb contents of 0%, 5%, 15%, and …

The effect of post‐growth annealing on InAs/GaAs quantum dot solar cells (QDSCs) is
studied. A significant improvement in photoemission, photocurrent density and spectral …

We report the fabrication of InAs/GaAs quantum dot solar cells (QDSCs) with enhanced
photocurrent and no degradation in open circuit voltage (V OC) compared to a solar cell …

The impact of using thin GaAs (Sb)(N) capping layers (CLs) on InAs/GaAs quantum dots
(QDs) is investigated for their application in solar cell devices. We demonstrate the ability to …

Optical and structural properties of submonolayer InGaAs/GaAs quantum dot solar cells
(SML-QDSCs) are investigated and compared with quantum well solar cells (QWSCs) …

We fabricate a high-efficiency InAs/GaAs quantum dot (QD) solar cell. It contains five layers
of high-density self-assembled InAs QDs grown by metalorganic chemical vapor deposition …

We focused on design of suitable underlying and covering layers of InAs/GaAs quantum
dots (QDs) with the aim to increase the carrier extraction rate in the QD solar cell structures …