Fully visible light controlled neuro-synaptic ReRAM device based on metal oxide heterojunction

S Shrivastava, HN Chi, SE Limantoro, H Juliano… - Applied Physics …, 2024 - pubs.aip.org
Photoelectric synaptic devices as a combination of electronic synapse and photodetector
are considered as emerging bio-inspired device technologies. These devices have …

Low‐dimensional nanomaterial/Si heterostructure‐based photodetectors

W Tian, H Sun, L Chen, P Wangyang, X Chen… - InfoMat, 2019 - Wiley Online Library
Due to its excellent electrical and optical features, silicon (Si) is highly attractive for
photodetector applications. The design and fabrication of low‐dimensional semiconductor/Si …

Record-Breaking-High-Responsivity Silicon Photodetector at Infrared 1.31 and 1.55 μm by Argon Doping Technique

C Li, JH Zhao, XH Liu, ZY Ren, Y Yang… - … on Electron Devices, 2023 - ieeexplore.ieee.org
The introduction of intermediate band (IB) into the bandgap of silicon (Si) is an efficient way
to enhance light absorption of Si in the short-wave infrared region. In this article, we report …

Development and thinking of silicon photonics heterogenous integration

Z WANG, T WANG, J ZHANG - Bulletin of …, 2022 - bulletinofcas.researchcommons.org
Integrated photonics are fast-developing research field for next generation information
technology. Current silicon photonic integrated chips strongly benefit from low-cost and high …

Facile fabrication of amorphous-In2Se3/Si heterojunction for fast ultraviolet to near-infrared broadband photodetection

K Li, H Chen, K Ling, W Li, X Liu - Journal of Alloys and Compounds, 2023 - Elsevier
Abstract Indium selenide (In 2 Se 3) has emerged as a promising candidate for broadband
photodetection due to its suitable bandgap, high electron mobility, high optical absorption …

Tunable optoelectronic response in van der Waals heterojunction transistors for artificial visual recognition

M Dang, X Duan, C Liu, S Zhang, X Hong… - Applied Physics …, 2024 - pubs.aip.org
Optoelectronic synaptic transistors are advantageous in in-memory light sensing for artificial
neural networks. Herein, optoelectronic synaptic junction field-effect transistors (JFETs) …

Flexible and transparent artificial synapse devices based on thin-film transistors with nanometer thickness

C Dai, C Huo, S Qi, M Dai, T Webster… - International Journal of …, 2020 - Taylor & Francis
Background Artificial synaptic behaviors are necessary to investigate and implement since
they are considered to be a new computing mechanism for the analysis of complex brain …

Poly (vinyl alcohol)-gated junctionless Al-Zn-O phototransistor for photonic and electric hybrid neuromorphic computation

Y Zhao, G Feng, J Jiang - Solid-State Electronics, 2020 - Elsevier
The hardware implementation of biological synapses is very necessary for a new brain-like
neuromorphic computation system. In recent years, optoelectronic synaptic devices have …

Amorphous silicon photodetector for integrated photonics applications

N CODREANU - 2018 - politesi.polimi.it
Complex photonic integrated circuits (PICs) represent the path towards the realization of
platforms capable to dynamically manipulate amplitude and phase of the light and fully …

Tailoring the energy band in flexible photodetector based on transferred ITO/Si heterojunction via interface engineering

G Yao, Z Yan, F Liao, S Chen, H Zhang, M Gao, Y Lin - Nanoscale, 2018 - pubs.rsc.org
Interface engineering is an important method to modulate electronic structures for improving
the physical properties of semiconductors as well as designing novel devices. Recently …