LETI LIR has been involved in Amorphous Silicon uncooled microbolometer development
for a few years. This paper reports recent progress that have been carried out both in …

A new type of bolometer detector for the millimeter and submillimeter spectral range is
described. The bolometer is constructed of silicon using integrated circuit fabrication …

LETI LIR has been involved in Amorphous Silicon uncooled microbolometer development
for a few years. This silicon IR detection is now well mastered and matured so that industrial …

Highly sensitive hydrogenated amorphous silicon (a-Si: H) microbolometer arrays have
been developed that take advantage of the high temperature coefficient of resistance (TCR) …

The optoelectronic properties of hydrogenated amorphous silicon (α-Si: H) has been always
considered almost exclusively for the fabrication of wide-area low-cost photovoltaic panels …

Common devices for infrared spectroscopy tend to be large and expensive, having a high
resolution power. For many applications such high efficiency is not necessary. Therefore, a …

This paper describes the processes now most often used to deposit polycrystalline,
microcrystalline or amorphous Si films, and their applications for sensors. The processes are …

Different structures of high-speed infrared sensors based on amorphous silicon germanium
and amorphous silicon heterostructures have been successfully developed on crystalline …

A process is reported for the formation of high-performance thin single-crystal silicon films on
glass substrates. The process utilizes the electrostatic bonding of a silicon wafer to glass …

This paper discusses the feasibility of using hydrogenated amorphous silicon
photodetectors in optical interconnections. Our analysis of the transient carrier transport in …