In‐plane coupling effect on absorption coefficients of InAs/GaAs quantum dots arrays for intermediate band solar cell
Coupled semiconductor quantum dot (QD) arrays emerged recently as promising structures
for the next generation of high efficiency intermediate band solar cell (IBSC), because of …
for the next generation of high efficiency intermediate band solar cell (IBSC), because of …
Contribution of a single quantum dots layer in intermediate band solar cells: A capacitance analysis
H Boustanji, S Jaziri, JL Lazzari - Solar Energy Materials and Solar Cells, 2017 - Elsevier
Theoretical model and numerical analysis of charge accumulation within a single GaSb
quantum dots layer embedded in GaAs-based Schottky diode is performed. We hereby give …
quantum dots layer embedded in GaAs-based Schottky diode is performed. We hereby give …
Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell
A GaAs quantum dot (QD) array embedded in a AlGaAs host material was fabricated using a
strain-free approach, through combination of neutral beam etching and atomic hydrogen …
strain-free approach, through combination of neutral beam etching and atomic hydrogen …
Nanostructured photovoltaics for space power
Quantum dot enhanced solar cells have been evaluated both theoretically and
experimentally. A detailed balance simulation of InAs quantum dot (QD) enhanced solar …
experimentally. A detailed balance simulation of InAs quantum dot (QD) enhanced solar …
Effect of thermal annealing on absorption and hole escape processes in type II GaSb/GaAs quantum dots: Implications for solar cell design
We present a theoretical study of the rapid thermal annealing process and strain on the
electronic, optical, and charge dynamical properties of type II GaSb/GaAs quantum dots …
electronic, optical, and charge dynamical properties of type II GaSb/GaAs quantum dots …
The effects of interdot spacing and dot size on the performance of InGaAs/GaAs QDIBSC
In0. 53Ga0. 47As/GaAs‐based quantum dot intermediate band solar cells (QDIBSCs) have
been designed and optimized for the next generation photovoltaic technology. The wave …
been designed and optimized for the next generation photovoltaic technology. The wave …
On the spectral response of interdiffused quantum dot ensembles embedded in the intrinsic region of InGaAs/GaAs quantum dot solar cells
SSK Sinha, A Rai, S Kumar, SSA Askari - Physica E: Low-dimensional …, 2021 - Elsevier
Semiconductor nanostructures, such as, quantum dots (QDs), embedded in the absorber
layer of solar cells (SCs) are high priority research topics in the field of QDSCs. The dot size …
layer of solar cells (SCs) are high priority research topics in the field of QDSCs. The dot size …
Effect of capping rate on the performance of InAs/GaAs quantum dot solar cell
A RAI - Physica Scripta, 2024 - iopscience.iop.org
The GaAs capping layer significantly influences the structural and optoelectronic
characteristics of the InAs quantum dot (QD). The capping rate modifies the essential …
characteristics of the InAs quantum dot (QD). The capping rate modifies the essential …
Growth and characterization of GaAs1− xSbx barrier layers for advanced concept solar cells
SP Bremner, GM Liu, N Faleev, K Ghosh… - Journal of Vacuum …, 2008 - pubs.aip.org
The In As∕ Ga As Sb material system is a promising medium for the implementation of a
quantum dot solar cell due to a favorable valence band alignment. The quantum dot solar …
quantum dot solar cell due to a favorable valence band alignment. The quantum dot solar …
Study of GaAs1-xNx/GaAs Quantum Dot Structure for Solar Cell Applications
M Boubakeur, A Aissat, JP Vilcot - 2019 7th International …, 2019 - ieeexplore.ieee.org
This paper aims to model and simulate a new quantum dot solar cell (QDSC), based on
GaAs 1-x Nx/GaAs. In this work, we have studied different effects such as the influence of the …
GaAs 1-x Nx/GaAs. In this work, we have studied different effects such as the influence of the …