Our work focuses on the simulation and optimization of InSb/GaAs quantum dot solar cell.
We have studied the effects of different parameters of the quantum dot such as the number …

This paper focuses on the simulation and optimization of electrical and optical properties
such as current density-voltage (JV), external quantum efficiency (EQE) and the …

We propose an innovative description to provide a quantitative basis to enhance the
conversion efficiency of InAs/GaAs quantum dot solar cells (QDSC). A theoretical approach …

This paper reports electrical characteristics of an intermediate band pin GaAs solar cell with
InAs quantum dots embedded in the intrinsic region using Synopsis TCAD simulation tools …

In this work, the influence of quantum dot (QD) position on the performance of solar cells
was studied. The presence of QDs within the base regions leads to improved open circuit …

We have reported InAs/GaAs and InGaAs/GaAs quantum dot solar cells (QDSCs) and the
effect of rapid thermal annealing (RTA) on their optical properties. A thermal stability was …

We have studied the material and photovoltaic characteristics of InAs/GaAsSb sub-
monolayer quantum dot solar cells (QDSCs) with different Sb contents of 0%, 5%, 15%, and …

Quantum dot solar cells (QDSC) have been extensively studied by various researchers for
the last 15 years as they have much higher conversion efficiency and it is capable of …

The use of nanostructures such as quantum dots (QD) offers tremendous potential to realize
high-efficiency photovoltaic (PV) cells. The optimization of the electronic structure of the …

The GaAs capping layer significantly influences the structural and optoelectronic
characteristics of the InAs quantum dot (QD). The capping rate modifies the essential …