LED micro-displays offer diverse applications with their superior characteristics and unique
performance, particularly in high light utilization efficiency (LUE), design simplicity, long …

Using a GaN-based light emitting diode (LED) epitaxial structure grown on Si, individually
addressable 10× 10 micro-pixelated LED (μLED) arrays with pixel diameters of 45 μm and …

GaN-based Micro-LEDs were developed for more than a decade and are considered as the
next generation of display technology. Micro-LEDs have more versatile functions than …

GaN green LEDs grown on the Si substrate are expected to become low-cost and high-
efficiency green light sources in future years, thus promoting the potential of GaN-on-Si …

In this paper, fabrication processes of a 0.55-inch 400× 240 high-brightness active-matrix
micro-light-emitting diode (LED) display using GaN-on-Si epi-wafers are described. The …

Due to the excellent optoelectronic properties, fast response time, outstanding power
efficiency and high stability, micro-LED plays an increasingly important role in the new …

Micro-displays based on an array of micro-sized light emitting diodes (µLEDs) are a
promising technology for a wide range of applications. In these 2-dimensional arrays, each …

Full-color micro-LED displays are being widely developed and regarded as a primary option
in current microdisplay technologies to fulfill the urgent demands of metaverse applications …

High‐brightness GaN‐based emissive microdisplays can be fabricated with different
approaches that are listed and described. They consist either of hybridizing a GaN LED …

Micro light-emitting diode (micro-LED) display, mainly based on inorganic GaN-based LED,
is an emerging technique with high contrast, low power consumption, long lifetime and fast …