In this paper room temperature pump-probe spectroscopy is employed to study ultrafast
absorption dynamics in type-II GaSb/GaAs quantum dots (QDs). Our results identify a strong …

Optical properties of the GaSb/GaAs quantum dot system are investigated using a time-
resolved photoluminescence technique. In this type-II heterostructure the carriers of different …

The electronic structure and thermal carrier capture and escape mechanisms are studied for
GaSb/GaAs quantum dots with a type-II band alignment using admittance spectroscopy …

The optical properties and dynamics of charge carriers in self-organized arrays of type-II
(staggered band lineup) GaSb/GaAs quantum dots are studied. Interband absorption from …

Using a femtosecond three-pulse pump-probe technique, we investigated spectral hole-
burning and gain recovery dynamics in self-organized In (Ga) As quantum dots. The spectral …

Epitaxially-grown semiconductor quantum dots (QDs) provide an attractive platform for the
development of deterministic sources of high-quality quantum states of light. Such non …

In this work, we use photoluminescence (PL) spectroscopy to investigate how self-
assembled GaSb/GaAs quantum dots (QDs) depend on their growth mechanism. Carrier …

The type II band alignment of GaSb quantum dots (QDs) in a GaAs matrix leads to peculiar
optical and electronic properties [1–4]. Such type II QDs provide an about twice as large hole …

Time‐resolved radiative recombination measurements on GaSb quantum dots have been
performed. The GaSb quantum dots are grown by molecular beam epitaxy on (100) GaAs …

In time-resolved experiments at InGaAs/GaAs quantum-dots-in-a-well (DWELL)
semiconductor optical amplifiers, pump-probe of the ground state (GS) population, and …