The technological appeal of multiferroics is the ability to control magnetism with electric
field,,. For devices to be useful, such control must be achieved at room temperature. The …

Multiferroic materials showing coupled electric, magnetic and elastic orderings provide a
platform to explore complexity and new paradigms for memory and logic devices. Until now …

Multiferroics are of interest for memory and logic device applications, as the coupling
between ferroelectric and magnetic properties enables the dynamic interaction between …

Out-of-plane ferroelectricity with a high transition temperature in nanometer-scale films is
required to miniaturize electronic devices. Direct visualization of stable ferroelectric …

Spintronic elements based on spin transfer torque have emerged with potential for on‐chip
memory, but they suffer from large energy dissipation due to the large current densities …

We explore the effect of charge carrier doping on ferroelectricity using density functional
calculations and phenomenological modeling. By considering a prototypical ferroelectric …

Epitaxial growth of SrTiO 3 on silicon by molecular beam epitaxy has opened up the route to
the integration of functional complex oxides on a silicon platform. Chief among them is …

Single-phase multiferroic materials that allow the coexistence of ferroelectric and magnetic
ordering above room temperature are highly desirable, motivating an ongoing search for …

Ferroelectric ferromagnets are exceedingly rare, fundamentally interesting multiferroic
materials that could give rise to new technologies in which the low power and high speed of …

An unexplored physical mechanism which produces a magnetoelectric effect in ferroelectric-
ferromagnetic multilayers is studied based on first-principles calculations. Its origin is a …