An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots
F Qiu, W Qiu, Y Li, X Wang, Y Zhang, X Zhou… - …, 2015 - iopscience.iop.org
We report the investigation of exciton dynamics in type-II self-assembled GaSb/GaAs
quantum dots. The GaSb/GaAs quantum dots (QDs) were grown using a modified liquid …
quantum dots. The GaSb/GaAs quantum dots (QDs) were grown using a modified liquid …
Structural and optical properties of type II GaSb/GaAs self-assembled quantum dots grown by molecular beam epitaxy
We report structural and optical properties of GaSb/GaAs self-assembled quantum dots
(QDs) grown by molecular beam epitaxy. The QDs, with nanometer-scale dimensions, were …
(QDs) grown by molecular beam epitaxy. The QDs, with nanometer-scale dimensions, were …
Optical spectroscopy of self-assembled type II GaSb/GaAs quantum dot structures grown by molecular beam epitaxy
RA Hogg, K Suzuki, K Tachibana, L Finger… - Applied physics …, 1998 - pubs.aip.org
We report an optical spectroscopic study of GaSb/GaAs quantum dots (QDs) formed by the
Stranski–Krastanow growth mode using molecular beam epitaxy. We identify the QD …
Stranski–Krastanow growth mode using molecular beam epitaxy. We identify the QD …
Sb/As intermixing in self-assembled GaSb/GaAs type II quantum dot systems and control of their photoluminescence spectra
C Jiang, H Sakaki - Physica E: Low-dimensional Systems and …, 2005 - Elsevier
The intermixing of Sb and As atoms induced by rapid thermal annealing (RTA) was
investigated for type II GaSb/GaAs self-assembled quantum dots (QD) formed by molecular …
investigated for type II GaSb/GaAs self-assembled quantum dots (QD) formed by molecular …
[HTML][HTML] Photoluminescence properties as a function of growth mechanism for GaSb/GaAs quantum dots grown on Ge substrates
Z Zon, S Thainoi, S Kiravittaya… - Journal of Applied …, 2019 - pubs.aip.org
In this work, we use photoluminescence (PL) spectroscopy to investigate how self-
assembled GaSb/GaAs quantum dots (QDs) depend on their growth mechanism. Carrier …
assembled GaSb/GaAs quantum dots (QDs) depend on their growth mechanism. Carrier …
Growth of stacked GaSb/GaAs self-assembled quantum dots by molecular beam epitaxy
K Suzuki, Y Arakawa - Journal of crystal growth, 1999 - Elsevier
A stacked structure of self-assembled GaSb/GaAs quantum dots (QDs) has been grown by
molecular beam epitaxy in the Stranski–Krastanow growth mode. The stacked structure …
molecular beam epitaxy in the Stranski–Krastanow growth mode. The stacked structure …
Long-wavelength luminescence from GaSb quantum dots grown on GaAs substrates
Self-assembled GaSb quantum dots (QDs) with a photoluminescence wavelength longer
than 1.3 μm were successfully grown by suppressing the replacement of As and Sb on the …
than 1.3 μm were successfully grown by suppressing the replacement of As and Sb on the …
[PDF][PDF] Radiative recombination in type II GaSb/GaAs quantum dots
H Born, L Müller‐Kirsch, R Heitz, A Hoffmann… - physica status solidi …, 2001 - Citeseer
The type II band alignment of GaSb quantum dots (QDs) in a GaAs matrix leads to peculiar
optical and electronic properties [1–4]. Such type II QDs provide an about twice as large hole …
optical and electronic properties [1–4]. Such type II QDs provide an about twice as large hole …
Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots
We present structural, electrical, and theoretical investigations of self-assembled type-II
GaSb/GaAs quantum dots (QDs) grown by molecular beam epitaxy. Using cross-sectional …
GaSb/GaAs quantum dots (QDs) grown by molecular beam epitaxy. Using cross-sectional …
Energy-selective charging of type-II GaSb/GaAs quantum dots
The hole confinement in type-II self-organized GaSb/GaAs quantum dots (QDs) was
investigated by combining optical excitation and time-resolved capacitance spectroscopy …
investigated by combining optical excitation and time-resolved capacitance spectroscopy …