The ability to represent information using an antiferromagnetic material is attractive for future
antiferromagnetic spintronic devices. Previous studies have focussed on the utilization of …

Much theoretical and experimental attention has been focused on the electrical switching of
the antiferromagnetic (AFM) Néel vector via spin-orbit torque. Measurements employing …

Ferromagnets are key materials for sensing and memory applications. In contrast,
antiferromagnets, which represent the more common form of magnetically ordered materials …

Antiferromagnets with zero net magnetic moment, strong anti-interference, and ultrafast
switching speed are potentially competitive in high-density information storage. The body …

Cubic materials host high crystal symmetry and hence are not expected to support
anisotropy in transport phenomena. In contrast to this common expectation, here we report …

We investigate the current-induced switching of the Néel order in NiO (001)/Pt
heterostructures, which is manifested electrically via the spin Hall magnetoresistance …

Manipulating spin polarization orientation is challenging but crucial for field-free spintronic
devices. Although such manipulation has been demonstrated in a limited number of …

Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast
switching speeds and robustness against magnetic fields,–. Different device concepts have …

We report the observation of antiferromagnetic insulator-mediated spin-orbit-torque
switching in Pt/Ni O/Co 1− x Tb x heterostructures. By measuring the current-induced shift in …

Exchange bias, a shift in the hysteresis loop of a ferromagnet arising from interfacial
exchange coupling between adjacent ferromagnetic and antiferromagnetic layers, is an …